1. Setup

semi bar junction depletion only
Figure 1. Imagine a bar of silicon
Parameters[1]
  • w, h = 110 μm

  • L = 230 μm

  • a−b = 3.7 μm

  • ρ+ = 4.2×1015 #/cm3

  • ρ = 1.8×1019 #/cm3

  • The region outside of [b, a] has no net charge.

2. Task

Plot the E-field along the x direction from 0 to L with the doping densities given.

Write a brief, self-contained, report that describes the geometry, your approach strategy to finding the E-field, the plot (completely labeled). Write a colophon section that describes the technologies and techniques you used to produce the report.

Submit a single multi-page PDF file.


1. These are very roughly those of the 1N4148 diode.